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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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57,383 pcs
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57383 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,985 pcs
|
1985 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,628 pcs
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1628 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,180 pcs
|
1180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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98 pcs
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98 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD7N10LTM is an N-Channel enhancement mode MOSFET from ON Semiconductor, fabricated using MOSFET (Metal Oxide) technology. It is designed for efficient power switching and management applications. The device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 5.8A at 25°C case temperature. The typical on-resistance (Rds(on)) is 350 mOhm maximum at Vgs=10V and Id=2.9A. The gate threshold voltage (Vgs(th)) is typically 2V maximum at Id=250µA. With a low gate charge (Qg) of 6 nC at Vgs=5V and input capacitance (Ciss) of 290 pF at Vds=25V, the FQD7N10LTM offers efficient switching characteristics. The device is housed in a surface mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA. It supports a wide operating junction temperature range from -55°C to 150°C, and with a maximum power dissipation of 2.5W (Ta) and 25W (Tc), it is suitable for various power management circuits, DC-DC converters, and load switching applications.
The drain-to-source voltage (Vdss) is 100V.
The FQD7N10LTM is offered in a TO-252-3 (DPak) surface mount package, with supplier device package TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this data is unverified and should be confirmed with the official datasheet.
The continuous drain current (Id) is 5.8A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 350 mOhm at Vgs=10V and Id=2.9A.
The maximum gate threshold voltage (Vgs(th)) is 2V at Id=250µA.