| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQD6N50CTM is an N-Channel MOSFET from ON Semiconductor designed for high-voltage switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 4.5A at case temperature 25°C. The device offers a maximum on-resistance of 1.2 Ohm at 2.25A and 10V gate drive, with a gate charge of 25 nC and input capacitance of 700 pF.
This MOSFET is suitable for power supply circuits, DC-DC converters, and motor control systems requiring high voltage and moderate current handling. The gate threshold voltage is 4V maximum at 250 µA, and the maximum gate-source voltage is ±30V. Power dissipation is rated at 2.5W at ambient temperature and 61W at case temperature.
The device is housed in a surface mount DPAK package (TO-252AA) with a TO-252-3, DPak (2 Leads + Tab), SC-63 case outline. It operates over a junction temperature range of -55°C to 150°C. Compliance claims include RoHS3, REACH unaffected, and MSL 1, but these are unverified.
500V.
Surface mount DPAK (TO-252AA) package.
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
4V maximum at 250µA.
4.5A continuous at case temperature 25°C.
1.2 Ohm maximum at 2.25A, 10V.