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FQD6N25TM FQD6N25TM is an N-Channel MOSFET from On Semiconductor with a 250V drain-source voltage rating and 4.4A continuous drain current.
Mfr Part #:

FQD6N25TM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQD6N25TM is an N-Channel MOSFET from On Semiconductor with a 250V drain-source voltage rating and 4.4A continuous drain current.
✓ Total Stock: 91,229 pcs

FQD6N25TM Available from 2 distributors

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Flip Electronics ✓
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89,500 pcs
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89500 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
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1,729 pcs
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1729 pcs On Request 1 On Request On Request 1119+ On Request On Request
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FQD6N25TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD6N25TM Description

Short technical summary and product information.

The FQD6N25TM is an N-Channel power MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of 250 V and a maximum continuous drain current of 4.4 A at case temperature (Tc). The device has a maximum drain-source on-resistance of 1 Ohm at a gate drive of 10V and a drain current of 2.2A.

 

This MOSFET is designed for surface mount assembly and is offered in the TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA. It supports a maximum gate-source voltage of ±30V and has a maximum gate threshold voltage of 5V at a drain current of 250µA. The device can dissipate up to 45W at the case temperature and 2.5W at ambient temperature.

 

The FQD6N25TM operates over a junction temperature range of -55°C to 150°C. It has a maximum gate charge of 8.5 nC at 10V and a maximum input capacitance of 300 pF at a drain-source voltage of 25V, making it suitable for various power switching applications.

FQD6N25TM Quick Information

Product Type: MOSFET
Canonical Name: FQD6N25TM N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQD6N25TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD6N25TM Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • 4.4A continuous drain current rating.
  • 1 Ohm maximum on-resistance at 10V gate drive.
  • Surface mount TO-252AA (DPak) package.
  • Operates from -55°C to 150°C junction temperature.

FQD6N25TM Applications

  • Power switching circuits and power supplies.
  • DC-DC converter and inverter applications.
  • Motor control and load switching systems.

FQD6N25TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD6N25TM?

The maximum drain-to-source voltage (Vdss) is 250 V.

What is the maximum continuous drain current of this MOSFET?

The maximum continuous drain current at case temperature (Tc) is 4.4 A.

What is the on-resistance of the FQD6N25TM?

The maximum drain-source on-resistance is 1 Ohm at a gate voltage of 10V and drain current of 2.2A.

What package is the FQD6N25TM available in?

It is available in a surface mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA.

What is the operating temperature range for the FQD6N25TM?

The operating junction temperature range is -55°C to 150°C.

Is the FQD6N25TM RoHS compliant?

The existing data indicates it is RoHS3 compliant, though this is unverified.

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