| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ Tc) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD6N25TF is a power MOSFET manufactured by On Semiconductor, featuring N-Channel enhancement mode technology. It is rated for a maximum drain-source voltage of 250V and a continuous drain current of 4.4A at case temperature (Tc). The device exhibits a maximum on-resistance of 1 ohm at 2.2A and 10V gate drive, making it suitable for switching applications.
This MOSFET offers a maximum gate threshold voltage of 5V at 250µA, with a maximum gate-source voltage rating of ±30V. The typical input capacitance is 300pF at 25V drain-source, and the total gate charge is 8.5 nC at 10V, enabling efficient gate drive. Power dissipation is rated at 2.5W at ambient temperature and 45W at case temperature.
The FQD6N25TF is packaged in a surface-mount DPAK (TO-252) package, specifically the TO-252AA variant, with three leads and a tab. It is designed for operation over a junction temperature range of -55°C to 150°C. The device is RoHS compliant and has a moisture sensitivity level of 1.
250V.
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package TO-252AA.
-55°C to 150°C (junction temperature).
Yes, it is listed as RoHS3 Compliant (unverified).
5V at 250µA drain current.
1 ohm at 2.2A drain current and 10V gate voltage.
8.5 nC at 10V gate voltage.