FQD60N03LTM FQD60N03LTM is an N-Channel power MOSFET from ON Semiconductor. It offers 30V drain-source voltage and 30A continuous drain current in a TO-252-3 DPAK surface mount package.
Mfr Part #:

FQD60N03LTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQD60N03LTM is an N-Channel power MOSFET from ON Semiconductor. It offers 30V drain-source voltage and 30A continuous drain current in a TO-252-3 DPAK surface mount package.
Total Stock: 90,400 pcs

FQD60N03LTM Available from 1 distributor

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FQD60N03LTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD60N03LTM Description

Short technical summary and product information.

The FQD60N03LTM is an N-Channel power MOSFET from ON Semiconductor, designed for high-efficiency power switching applications. The device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 30A at case temperature (Tc). The MOSFET utilizes metal oxide semiconductor technology and supports gate drive voltages of 5V and 10V.

 

Electrical performance includes a maximum on-state resistance (Rds on) of 23 milliohms at 30A drain current and 10V gate drive. The device has a typical gate charge of 46 nC at 10V, and input capacitance of 900 pF at 15V drain-source voltage. Maximum power dissipation is 45W at case temperature.

 

The MOSFET is housed in a TO-252-3 (DPAK) surface mount package, also known as DPak (2 Leads + Tab) or SC-63. It supports surface mount assembly. The operating junction temperature range is -55°C to 150°C. The part is rated RoHS3 compliant and has an MSL of level 1 (unlimited), with REACH unaffected status (unverified).

FQD60N03LTM Quick Information

Product Type: MOSFET
Canonical Name: FQD60N03LTM N-Channel Power MOSFET
Subcategory: Single MOSFET

FQD60N03LTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD60N03LTM Features

  • 30V drain-source voltage rating.
  • 30A continuous drain current at Tc.
  • 23mOhm maximum on-state resistance at 10V.
  • TO-252-3 DPAK surface mount package.
  • Operating temperature range -55°C to 150°C.

FQD60N03LTM Applications

  • Power management and DC-DC converters.
  • Load switching and battery protection circuits.
  • Motor drive and solenoid control applications.
  • General purpose high-efficiency switching.

FQD60N03LTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

The drain-source voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 30A at case temperature (Tc).

What is the package type for FQD60N03LTM?

The package is TO-252-3 (DPAK), also known as DPak (2 Leads + Tab), SC-63.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the maximum on-state resistance?

The maximum on-state resistance is 23mOhm at 30A drain current and 10V gate drive.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at 250µA drain current.

What is the RoHS compliance status?

The part is marked as RoHS3 Compliant, but this is unverified.

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