| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,060 pcs
|
20060 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,367 pcs
|
6367 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
1,651 pcs
|
1651 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,280 pcs
|
1280 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,280 pcs
|
1280 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
77 pcs
|
77 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD5P20TM is a P-Channel enhancement mode MOSFET manufactured by ON Semiconductor. It features a drain-source breakdown voltage of 200 V and a maximum continuous drain current of 3.7 A at case temperature (Tc). The device utilizes MOSFET (Metal Oxide) technology and is designed for surface mount assembly.
Key electrical characteristics include a maximum drain-source on-resistance of 1.4 Ohms at a gate drive of 10 V and drain current of 1.85 A. The total gate charge is 13 nC at Vgs = 10 V, and the input capacitance is 430 pF at Vds = 25 V. The maximum gate threshold voltage is 5 V at a drain current of 250 µA, and the maximum gate-source voltage is ±30 V.
The device is capable of dissipating up to 45 W at case temperature (Tc) and 2.5 W at ambient temperature (Ta). It operates over a junction temperature range of -55°C to 150°C. The FQD5P20TM is supplied in the TO-252-3, DPak (2 Leads + Tab), SC-63 package, also known as the TO-252AA supplier device package, making it suitable for automated surface mount manufacturing processes.
The drain-source breakdown voltage (Vdss) is 200 V.
The maximum continuous drain current is 3.7 A at case temperature (Tc).
The maximum drain-source on-resistance (Rds On) is 1.4 Ohms at a gate-source voltage of 10 V and a drain current of 1.85 A.
The FQD5P20TM is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, also known as TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this data is unverified and should be confirmed from official documentation.