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FQD5N60CTM N-Channel MOSFET with 600V drain-source voltage and 2.8A drain current. Surface mount package in TO-252 (DPAK).
Mfr Part #:

FQD5N60CTM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage and 2.8A drain current. Surface mount package in TO-252 (DPAK).
✓ Total Stock: 7,092 pcs

FQD5N60CTM Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
6,987 pcs
On Request
6987 pcs On Request 1 On Request On Request On Request On Request On Request
Speed Components Ltd ✓
Non-Authorised Inventory information
85 pcs
On Request
85 pcs On Request 1 On Request On Request 13+ On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
20 pcs
On Request
20 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQD5N60CTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD5N60CTM Description

Short technical summary and product information.

The FQD5N60CTM is an N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage of 600V and a continuous drain current of 2.8A at case temperature.

 

Key electrical characteristics include a maximum on-resistance of 2.5 ohms at 1.4A and 10V gate drive, a gate threshold voltage of 4V at 250µA, and a maximum gate charge of 19 nC at 10V. Input capacitance is 670 pF at 25V drain-source.

 

The device is surface mounted in a TO-252-3 (DPAK) package, with a supplier device package of TO-252AA. It can dissipate up to 49W at case temperature and operates over a junction temperature range of -55°C to 150°C.

 

This MOSFET is suitable for power management and switching applications where high voltage and moderate current are required. The device is RoHS3 compliant and has an MSL of 1 (unlimited).

FQD5N60CTM Quick Information

Product Type: MOSFET
Canonical Name: FQD5N60CTM N-Channel MOSFET
Subcategory: Single MOSFET

FQD5N60CTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD5N60CTM Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 2.8A.
  • Low on-resistance of 2.5 ohms maximum.
  • Surface mount DPAK package for compact designs.
  • Wide operating temperature range -55°C to 150°C.

FQD5N60CTM Applications

  • Used in power supply switching circuits.
  • Ideal for high-voltage DC-DC converters.
  • Suitable for motor control applications.
  • Applicable in lighting ballasts and inverters.

FQD5N60CTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD5N60CTM?

600V.

What is the maximum drain current?

2.8A at case temperature.

What is the on-resistance?

2.5 ohms maximum at 1.4A and 10V gate drive.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the FQD5N60CTM available in?

Surface mount TO-252-3 (DPAK).

Is the FQD5N60CTM RoHS compliant?

Yes, RoHS3 Compliant (unverified).

What is the gate charge?

19 nC maximum at 10V gate-source voltage.

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