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FQD5N50CTM The FQD5N50CTM is a 500V, 4A N-Channel power MOSFET from On Semiconductor in a DPAK surface mount package.
Mfr Part #:

FQD5N50CTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQD5N50CTM is a 500V, 4A N-Channel power MOSFET from On Semiconductor in a DPAK surface mount package.
✓ Total Stock: 4,355 pcs

FQD5N50CTM Available from 1 distributor

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Smaxon Electronics ✓
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4,355 pcs
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4355 pcs On Request 1 On Request On Request 06+ On Request On Request
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FQD5N50CTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD5N50CTM Description

Short technical summary and product information.

The FQD5N50CTM is an N-Channel enhancement mode power MOSFET designed for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts. It features a drain-source voltage rating of 500V and a continuous drain current of 4A at 25°C. The device offers a low on-resistance of 1.4 Ohm maximum at VGS=10V, low gate charge of 18nC typical, and low reverse transfer capacitance of 15pF typical.

 

This MOSFET is built with Fairchild's planar stripe DMOS technology, providing superior switching performance and high energy pulse handling in avalanche and commutation modes. It is 100% avalanche tested and offers improved dv/dt capability. The device is RoHS compliant.

 

The FQD5N50CTM is supplied in a TO-252-3 (DPak) surface mount package, also known as SC-63, with a supplier device package of TO-252AA. It has a junction-to-case thermal resistance of 2.6°C/W and a junction-to-ambient thermal resistance of 50°C/W when mounted on a PCB.

FQD5N50CTM Quick Information

Product Type: MOSFET
Series: FQD5N50C
Canonical Name: FQD5N50CTM 500V N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FQD5N50CTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD5N50CTM Features

  • 500V drain-source voltage rating.
  • 4A continuous drain current at 25°C.
  • 1.4 Ohm maximum on-resistance at VGS=10V.
  • Low gate charge of 18nC typical.
  • RoHS compliant and 100% avalanche tested.

FQD5N50CTM Applications

  • High efficiency switched mode power supplies.
  • Active power factor correction circuits.
  • Electronic lamp ballasts with half bridge.
  • General purpose high voltage switching.

FQD5N50CTM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD5N50CTM?

The maximum drain-source voltage (VDSS) is 500V.

What is the continuous drain current of the FQD5N50CTM?

The continuous drain current is 4A at TC=25°C and 2.4A at TC=100°C.

What is the on-resistance of the FQD5N50CTM?

The maximum drain-source on-resistance is 1.4 Ohm at VGS=10V and ID=2A.

What package does the FQD5N50CTM come in?

It comes in a TO-252-3 (DPak) surface mount package, also known as SC-63, with supplier device package TO-252AA.

Is the FQD5N50CTM RoHS compliant?

Yes, the datasheet states it is RoHS compliant.

What is the operating temperature range of the FQD5N50CTM?

The operating and storage temperature range is -55°C to +150°C.

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