| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The FQD5N50CTF is a N-Channel MOSFET produced using Fairchild's planar stripe DMOS technology. It is rated for a maximum drain-source voltage of 500V and a continuous drain current of 4A at Tc=25°C. The device features a low on-resistance of 1.4 Ohm at Vgs=10V and Id=2A, and a maximum gate charge of 24 nC, enabling fast switching performance.
This MOSFET is well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. It is 100% avalanche tested and offers improved dv/dt capability, with a single pulse avalanche energy rating of 300 mJ.
The device is available in a surface mount TO-252-3 (DPak) package, also known as TO-252AA. It supports an operating junction temperature range of -55°C to +150°C and has a maximum power dissipation of 48W at Tc=25°C.
The maximum drain-source voltage is 500V.
It is available in a TO-252-3 (DPak) surface mount package.
-55°C to 150°C (junction temperature).
The part is listed as RoHS3 compliant, but this status is unverified.
The maximum gate charge is 24 nC at Vgs=10V.
300 mJ.
4 A at Tc=25°C.