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FQD5N20LTM

The FQD5N20LTM is an N-Channel power MOSFET from ON Semiconductor. It features a 200V drain-source breakdown voltage, 3.8A continuous drain current, and a low on-resistance of 1.2Ohm.

✓ Total Stock: 10,000 pcs

FQD5N20LTM Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	10,000 pcs On Request	10000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQD5N20LTM Description

Short technical summary and product information.

The FQD5N20LTM is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It utilizes MOSFET (Metal Oxide) technology and is designed for switching and amplification applications requiring high voltage and moderate current.

This device features a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current of 3.8A at case temperature Tc. The on-resistance is typically 1.2Ohm maximum at Vgs=10V and Id=1.9A. Gate charge is 6.2nC maximum at Vgs=5V, and input capacitance is 325pF at Vds=25V. The gate threshold voltage is 2V maximum at Id=250µA. Drive voltage range is 5V to 10V, with maximum gate-source voltage of ±20V.

The device can dissipate up to 37W at case temperature and 2.5W at ambient temperature. Operating junction temperature range is -55°C to 150°C. It is offered in a surface-mount TO-252-3 (DPak) package, also known as TO-252AA. The package has 2 leads and a tab for heat sinking.

Typical applications include power management in DC-DC converters, motor control, and load switching. The N-Channel polarity and 200V rating make it suitable for medium-voltage power supplies and industrial circuits.

FQD5N20LTM Quick Information

Product Type: MOSFET - Single N-Channel

Canonical Name: FQD5N20LTM N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

FQD5N20LTM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQD5N20LTM Features

N-Channel MOSFET with 200V drain-source voltage.
3.8A continuous drain current capability.
Low on-resistance of 1.2Ohm typical.
Surface-mount TO-252 (DPak) package.
RoHS3 compliant and MSL 1 rated.

FQD5N20LTM Applications

DC-DC converter power switching applications.
Motor control and load switching circuits.
Medium-voltage power supply designs.
General purpose switching and amplification.

FQD5N20LTM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the FQD5N20LTM?

The maximum drain-source voltage is 200V.

What package does the FQD5N20LTM come in?

Surface-mount TO-252-3 (DPak), also known as TO-252AA.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FQD5N20LTM RoHS compliant?

RoHS3 Compliant (unverified).

What is the continuous drain current rating?

3.8A at case temperature.

What is the on-resistance?

Maximum 1.2Ohm at Vgs=10V, Id=1.9A.

What is the gate charge?

6.2nC maximum at Vgs=5V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	3.8A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	325 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5W (Ta)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.9A, 10V
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 250µA