| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 0806+ | On Request | On Request |
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The FQD5N15TF is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power management applications requiring a drain-source voltage rating of 150V and continuous drain current of 4.3A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 800mOhm at Vgs=10V and Id=2.15A, a typical gate charge of 7nC at Vgs=10V, and input capacitance of 230pF at Vds=25V. The gate threshold voltage is 4V maximum at Id=250µA. The device can dissipate up to 30W at case temperature 25°C and 2.5W at ambient temperature.
The MOSFET is housed in a surface-mount TO-252-3 (DPAK) package with the supplier device package designation TO-252AA. It is suitable for automated assembly and is rated for operation over a junction temperature range of -55°C to 150°C.
Typical applications include DC-DC converters, power supply circuits, and load switching in industrial and consumer electronics. The device is RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.
150V.
TO-252-3, DPAK (2 Leads + Tab), SC-63; supplier device package TO-252AA.
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
4.3A.
800mOhm at Vgs=10V, Id=2.15A.
7nC at Vgs=10V.