| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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779 pcs
|
779 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
165 pcs
|
165 pcs | On Request | 1 | On Request | On Request | 14+21+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD4P40TM is a P-Channel enhancement mode power MOSFET manufactured using ON Semiconductor's proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.
Key specifications include a maximum drain-source voltage of -400V, continuous drain current of -2.7A at 25°C (derated to -1.71A at 100°C), and a maximum on-resistance of 3.1 Ohm at Vgs = -10V and Id = -1.35A. The device features low gate charge (typical 18nC) and low reverse transfer capacitance (typical 11pF), contributing to efficient switching performance.
The MOSFET is 100% avalanche tested, with a single pulsed avalanche energy rating of 260mJ. It is available in a surface-mount TO-252 (DPAK) package and is suitable for applications such as electronic lamp ballasts based on complementary half-bridge topologies.
The maximum drain-source voltage is -400V.
The maximum continuous drain current is -2.7A at TC = 25°C, derated to -1.71A at TC = 100°C.
The maximum on-resistance is 3.1 Ohm at Vgs = -10V and Id = -1.35A.
The operating temperature range is -55°C to 150°C.
The FQD4P40TM is available in a surface-mount TO-252 (DPAK) package.
The maximum power dissipation is 50W at TC = 25°C, and 2.5W at TA = 25°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.