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FQD4P25TM-WS P-Channel MOSFET from On Semiconductor with 250V drain-source voltage and 3.1A continuous drain current. Surface mount in DPAK package.
Mfr Part #:

FQD4P25TM-WS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET from On Semiconductor with 250V drain-source voltage and 3.1A continuous drain current. Surface mount in DPAK package.
✓ Total Stock: 7,953 pcs

FQD4P25TM-WS Available from 1 distributor

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7,953 pcs
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FQD4P25TM-WS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD4P25TM-WS Description

Short technical summary and product information.

The FQD4P25TM-WS is a P-Channel enhancement mode MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 250V and a continuous drain current of 3.1A at 25°C case temperature. The device has a maximum on-resistance of 2.1 Ohm at 1.55A and 10V gate drive. Gate charge is 14 nC at 10V, and input capacitance is 420 pF at 25V. The maximum gate-source voltage is ±30V, and the threshold voltage is 5V at 250µA. Power dissipation is rated at 2.5W at ambient temperature and 45W at case temperature. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for switching and power management applications requiring high voltage and moderate current. It is housed in a surface mount TO-252-3 (DPak) package with supplier device package TO-252AA. The device is RoHS3 compliant and REACH unaffected (unverified).

FQD4P25TM-WS Quick Information

Product Type: P-Channel MOSFET
Canonical Name: FQD4P25TM-WS P-Channel MOSFET, 250V, 3.1A, DPAK
Subcategory: P-Channel MOSFET

FQD4P25TM-WS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD4P25TM-WS Features

  • P-Channel MOSFET with 250V drain-source voltage.
  • Continuous drain current rating of 3.1A.
  • Low on-resistance of 2.1 Ohm typical.
  • Surface mount DPAK package for easy assembly.
  • Wide operating temperature range -55°C to 150°C.

FQD4P25TM-WS Applications

  • High-side switching in DC-DC converters.
  • Power management in industrial equipment.
  • Motor control circuits requiring high voltage.
  • Battery protection circuits.
  • Load switching in automotive systems.

FQD4P25TM-WS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

250V.

What package does the FQD4P25TM-WS come in?

TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package TO-252AA.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQD4P25TM-WS RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

5V max at 250µA.

What is the maximum gate-source voltage?

±30V.

What is the continuous drain current?

3.1A at 25°C case temperature.

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