FQD4N25TM-WS N-Channel MOSFET from On Semiconductor with 250V maximum drain-source voltage and 3A continuous drain current. Surface mount in DPAK package.
Mfr Part #:

FQD4N25TM-WS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 250V maximum drain-source voltage and 3A continuous drain current. Surface mount in DPAK package.
✓ Total Stock: 27,505 pcs

FQD4N25TM-WS Available from 1 distributor

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FQD4N25TM-WS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD4N25TM-WS Description

Short technical summary and product information.

The FQD4N25TM-WS is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for general-purpose switching and amplification applications where moderate voltage and current handling are required.

 

Key electrical specifications include a maximum drain-source voltage of 250V, a continuous drain current of 3A at 25°C case temperature, and a maximum on-resistance of 1.75 ohms at Vgs = 10V. The gate threshold voltage is 5V maximum at 250 microamps drain current. The device features a maximum gate charge of 5.6 nC at Vgs = 10V and input capacitance of 200 pF at Vds = 25V, indicating low drive requirements for switching applications.

 

The MOSFET is housed in a surface-mount TO-252-3 (DPak/SC-63) package, specifically the TO-252AA supplier package. It operates over a junction temperature range from -55°C to 150°C with a maximum power dissipation of 2.5W at ambient temperature and 37W at case temperature. The recommended gate drive voltage is 10V with an absolute maximum gate-source voltage rating of ±30V.

FQD4N25TM-WS Quick Information

Product Type: MOSFET
Series: FQD4N25
Canonical Name: FQD4N25TM-WS N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQD4N25TM-WS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQD4N25TM-WS Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • 3A continuous drain current at 25°C case temperature.
  • 1.75 Ohm maximum on-resistance at 10V gate drive.
  • Surface mount DPAK TO-252-3 package.
  • Wide operating temperature range -55°C to 150°C.

FQD4N25TM-WS Applications

  • Suitable for general purpose DC-DC converters.
  • Used in power supply switch circuits.
  • Ideal for motor driver low-side switches.
  • Applicable in battery management protection.

FQD4N25TM-WS FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQD4N25TM-WS?

The maximum drain-source voltage is 250V.

What is the continuous drain current rating?

The continuous drain current is 3A at 25°C case temperature.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FQD4N25TM-WS available in?

It is available in a surface mount TO-252-3 (DPak, SC-63) package.

What is the maximum on-resistance?

The maximum on-resistance is 1.75 ohms at Vgs = 10V and Id = 1.5A.

Is the FQD4N25TM-WS RoHS compliant?

RoHS status is indicated as RoHS3 Compliant in the database but this data is unverified and has low confidence.

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