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FQD4N25TM FQD4N25TM is an N-Channel MOSFET from On Semiconductor with 250V drain-source voltage and 3A drain current. It comes in a DPAK surface-mount package.
Mfr Part #:

FQD4N25TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQD4N25TM is an N-Channel MOSFET from On Semiconductor with 250V drain-source voltage and 3A drain current. It comes in a DPAK surface-mount package.
✓ Total Stock: 31,330 pcs

FQD4N25TM Available from 1 distributor

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Smaxon Electronics ✓
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31,330 pcs
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31330 pcs On Request 1 On Request On Request 11+ On Request On Request
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FQD4N25TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD4N25TM Description

Short technical summary and product information.

The FQD4N25TM is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a drain-source voltage rating of 250V and a continuous drain current of 3A. The device has a maximum on-resistance of 1.75 ohms at a gate-source voltage of 10V and a drain current of 1.5A.

 

This MOSFET is designed for general-purpose switching applications. It offers a gate threshold voltage of up to 5V and a maximum gate-source voltage of ±30V. The total gate charge is 5.6 nC at Vgs=10V, and the input capacitance is 200 pF at Vds=25V.

 

The device is housed in a TO-252-3 (DPak) surface-mount package, also known as SC-63. It supports a maximum power dissipation of 2.5W at ambient temperature and 37W at case temperature. The operating junction temperature range is -55°C to +150°C.

FQD4N25TM Quick Information

Product Type: MOSFET
Canonical Name: FQD4N25TM N-Channel MOSFET 250V 3A DPAK
Subcategory: Single N-Channel

FQD4N25TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD4N25TM Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • Continuous drain current rating of 3A.
  • Low on-resistance of 1.75 ohms maximum.
  • Surface-mount DPAK package for compact designs.
  • Operating temperature range from -55°C to +150°C.

FQD4N25TM Applications

  • Ideal for power management in DC-DC converters.
  • Used in motor control and relay driver circuits.
  • Suitable for load switching in battery-powered devices.
  • Applicable in general-purpose switching power supplies.

FQD4N25TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD4N25TM?

The drain-source voltage rating is 250V.

What is the maximum drain current of the FQD4N25TM?

The maximum continuous drain current is 3A.

What is the on-resistance of the FQD4N25TM?

The maximum on-resistance is 1.75 ohms at Vgs=10V and Id=1.5A.

What package does the FQD4N25TM come in?

It comes in a TO-252-3 (DPak) surface-mount package, also known as SC-63.

What is the operating temperature range of the FQD4N25TM?

The operating junction temperature range is -55°C to +150°C.

Is the FQD4N25TM RoHS compliant?

Yes, it is listed as RoHS3 compliant.

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