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FQD4N20TM The FQD4N20TM is an N-Channel power MOSFET from On Semiconductor. It features a 200V drain-source voltage rating and 3A continuous drain current with a maximum on-resistance of 1.4 Ohms.
Mfr Part #:

FQD4N20TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQD4N20TM is an N-Channel power MOSFET from On Semiconductor. It features a 200V drain-source voltage rating and 3A continuous drain current with a maximum on-resistance of 1.4 Ohms.
✓ Total Stock: 90,000 pcs

FQD4N20TM Available from 1 distributor

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FQD4N20TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD4N20TM Description

Short technical summary and product information.

The FQD4N20TM is an N-Channel power MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. This device is designed for switching and amplification applications requiring a drain-to-source voltage rating of 200 V and a continuous drain current of 3 A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 1.4 Ohms at 1.5 A gate drive of 10 V, a gate threshold voltage of 5 V maximum at 250 µA drain current, and a maximum gate charge of 6.5 nC at 10 V. The input capacitance is rated at 220 pF maximum at 25 V drain-source voltage. The device supports a gate-to-source voltage range of ±30 V.

 

The FQD4N20TM is offered in a surface mount TO-252-3 package, also known as DPak (2 Leads + Tab) or SC-63, with a supplier device package of TO-252AA. It can dissipate up to 2.5 W at ambient temperature and 30 W at case temperature, with an operating junction temperature range of -55°C to 150°C.

FQD4N20TM Quick Information

Product Type: Power MOSFET
Series: FQD4N20
Canonical Name: FQD4N20TM N-Channel Power MOSFET
Subcategory: Single MOSFET

FQD4N20TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD4N20TM Features

  • N-Channel MOSFET with 200V drain-source rating.
  • 3A continuous drain current at 25°C.
  • 1.4 Ohm maximum on-resistance at 10V gate drive.
  • Surface mount TO-252AA package for compact designs.
  • Operating temperature range from -55°C to 150°C.

FQD4N20TM Applications

  • Suitable for power management in DC-DC converters.
  • Used in load switching and power supply circuits.
  • Ideal for motor control and driver applications.
  • Applicable in battery protection and charging circuits.

FQD4N20TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD4N20TM?

The drain-to-source voltage (Vdss) is 200 V.

What is the continuous drain current rating?

The continuous drain current (Id) at 25°C case temperature is 3 A.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 1.4 Ohms at 1.5 A drain current and 10 V gate-source voltage.

What package is the FQD4N20TM available in?

It is available in a surface mount TO-252-3 package (DPak, SC-63) with a supplier device package of TO-252AA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FQD4N20TM RoHS compliant?

The part is listed as RoHS3 Compliant, though this data is unverified.

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