| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,683 pcs
|
4683 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD3P50TM-F085 is a P-Channel enhancement-mode MOSFET manufactured by onsemi. It features a drain-to-source voltage rating of 500V and a continuous drain current of 2.1A at case temperature. The maximum on-resistance is 4.9Ω at a gate drive of 10V and drain current of 1.05A.
This device offers a maximum gate charge of 23nC at 10V and input capacitance of 660pF at 25V drain-source voltage, making it suitable for switching applications requiring moderate speed and efficiency. The gate threshold voltage is 5V maximum at 250µA drain current, and the gate-source voltage range is ±30V.
Thermal characteristics include a maximum power dissipation of 50W at case temperature and 2.5W at ambient temperature. The junction operating temperature range is -55°C to 150°C. The device is housed in a TO-252-3 (DPAK) surface-mount package with supplier device package designation TO-252AA.
The FQD3P50TM-F085 is intended for use in discrete semiconductor circuits requiring high-voltage P-Channel switching. Its surface-mount package enables automated assembly in volume production environments.
The drain-to-source voltage rating is 500V.
The maximum continuous drain current is 2.1A at case temperature (Tc).
The maximum drain-to-source on-resistance is 4.9Ω at a drain current of 1.05A and gate-source voltage of 10V.
The device is available in a TO-252-3 (DPak, 2 leads + tab, SC-63) surface-mount package with supplier device package TO-252AA.
The junction operating temperature range is -55°C to 150°C.
Maximum power dissipation is 50W at case temperature (Tc) and 2.5W at ambient temperature (Ta).
The maximum gate threshold voltage is 5V at a drain current of 250µA.