| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,321 pcs
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4321 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Tape & Reel | |
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The FQD3P50TM-AM002BLT is a P-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It is designed using planar stripe and DMOS technology to provide low on-state resistance and high switching performance. This device is suitable for switched mode power supplies, active power factor correction, and electronic lamp ballasts.
Key electrical specifications include a drain-source voltage rating of -500V, continuous drain current of -2.1A at 25°C, and a maximum drain-source on-resistance of 4.9 Ohm at Vgs=-10V and Id=-1.05A. The gate charge is typically 18 nC, and the input capacitance is 660 pF at Vds=25V. The device can handle pulsed drain current up to -8.4A and single pulse avalanche energy of 250 mJ.
The MOSFET is housed in a TO-252 (DPAK) surface mount package with a gull wing lead style. It is rated for operation over a junction temperature range of -55°C to 150°C. The device is Pb-Free and RoHS compliant.
The drain-source voltage rating is -500V.
It is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free.
The maximum gate charge is 23 nC at Vgs=10V, with a typical value of 18 nC.
The maximum drain-source on-resistance is 4.9 Ohm at Vgs=-10V and Id=-1.05A.
The single pulse avalanche energy is 250 mJ.