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FQD3P50TM

P-Channel enhancement mode MOSFET with 500V drain-source voltage and 2.1A continuous drain current. Suitable for switched mode power supplies and electronic lamp ballasts.

✓ Total Stock: 19,887 pcs

FQD3P50TM Available from 3 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	18,797 pcs On Request	18797 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,086 pcs On Request	1086 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	4 pcs On Request	4 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQD3P50TM Description

Short technical summary and product information.

The FQD3P50TM is a P-Channel enhancement mode power MOSFET from On Semiconductor's QFET family. It features a drain-source voltage of 500V and a continuous drain current of 2.1A at 25°C. The device offers a maximum on-state resistance of 4.9 Ohms at Vgs = 10V and Id = 1.05A.

This MOSFET is designed with low gate charge (typical 18 nC) and low reverse transfer capacitance (typical 9.5 pF) for efficient switching performance. It is 100% avalanche tested and supports a single pulsed avalanche energy of 250 mJ. The device operates over a junction temperature range of -55°C to +150°C.

The FQD3P50TM is housed in a surface-mount TO-252-3 (DPak) package. It is suitable for applications including switched mode power supplies, active power factor correction, and electronic lamp ballasts.

FQD3P50TM Quick Information

Product Type: MOSFET

Canonical Name: FQD3P50TM P-Channel MOSFET

Subcategory: Single MOSFET

FQD3P50TM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-Free

FQD3P50TM Features

500V drain-source voltage rating.
2.1A continuous drain current.
4.9 Ohm maximum on-state resistance.
Low gate charge of 18 nC typical.
100% avalanche tested for reliability.

FQD3P50TM Applications

Switched mode power supply designs.
Active power factor correction circuits.
Electronic lamp ballast applications.
High-voltage switching power systems.

FQD3P50TM FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FQD3P50TM?

The drain-source voltage (Vdss) is 500V.

What is the maximum continuous drain current?

The maximum continuous drain current is 2.1A at Tc = 25°C and 1.33A at Tc = 100°C.

What is the on-state resistance of this MOSFET?

The maximum on-state resistance (Rds On) is 4.9 Ohms at Id = 1.05A and Vgs = 10V.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +150°C.

What package type is the FQD3P50TM available in?

It is available in a surface-mount TO-252-3 (DPak) package.

Is the FQD3P50TM RoHS compliant?

The datasheet states the device is Pb-Free and RoHS Compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	2.1A (Tc)
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs	4.9Ohm @ 1.05A, 10V
Supplier Device Package	TO-252AA
Supplier Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA