FQD3N60CTM-WS N-Channel MOSFET from On Semiconductor with 600V drain-source voltage rating and 2.4A continuous drain current. Features 3.4 Ohm on-resistance and surface mount DPAK package.
Mfr Part #:

FQD3N60CTM-WS

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 600V drain-source voltage rating and 2.4A continuous drain current. Features 3.4 Ohm on-resistance and surface mount DPAK package.
✓ Total Stock: 202,422 pcs
$ Price Range: $0.40 - $0.44

FQD3N60CTM-WS Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200,000 pcs
200000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,422 pcs
2422 pcs On Request 1 On Request On Request On Request On Request On Request

FQD3N60CTM-WS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD3N60CTM-WS Description

Short technical summary and product information.

The FQD3N60CTM-WS is an N-Channel enhancement mode MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 2.4A at case temperature Tc. The maximum on-resistance is 3.4 Ohms at a drain current of 1.2A and gate-source voltage of 10V. The gate threshold voltage is 4V maximum at 250µA drain current. The device has a gate charge of 14nC at 10V and an input capacitance of 565pF at 25V drain-source voltage. The maximum power dissipation is 50W at Tc. The operating junction temperature range is -55°C to 150°C. The maximum gate-source voltage is ±30V. The MOSFET is supplied in a surface mount package compatible with TO-252-3, DPak (2 leads and tab), and SC-63 outlines. The supplier device package is TO-252AA. This component is suitable for applications requiring high voltage blocking and moderate current handling in a compact surface mount form factor.

FQD3N60CTM-WS Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FQD3N60CTM-WS MOSFET N-Channel 600V 2.4A
Subcategory: Single MOSFET

FQD3N60CTM-WS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD3N60CTM-WS Estimated Pricing

Qty Low High
2,500+ $0.44 $0.44
5,000+ $0.42 $0.42
12,500+ $0.40 $0.40
25,000+ $0.40 $0.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQD3N60CTM-WS Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 2.4A.
  • Maximum on-resistance of 3.4 Ohm at 10V gate drive.
  • Surface mount package in TO-252-3/DPak.
  • Operating temperature range from -55°C to 150°C.

FQD3N60CTM-WS Applications

  • Used in high-voltage DC-DC converters.
  • Suitable for switch-mode power supplies.
  • Ideal for power factor correction circuits.
  • Applicable in LED lighting drivers.

FQD3N60CTM-WS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD3N60CTM-WS?

600V.

What is the maximum continuous drain current?

2.4A at case temperature (Tc).

What is the on-resistance?

3.4 Ohm maximum at 1.2A drain current and 10V gate-source voltage.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the package type?

TO-252-3, DPak (2 leads + tab), SC-63, surface mount. Supplier device package is TO-252AA.

Is the device RoHS compliant?

The database indicates RoHS3 compliant, but this is unverified.

What is the gate threshold voltage?

4V maximum at 250µA drain current.

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