| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,422 pcs
|
2422 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD3N60CTM-WS is an N-Channel enhancement mode MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 2.4A at case temperature Tc. The maximum on-resistance is 3.4 Ohms at a drain current of 1.2A and gate-source voltage of 10V. The gate threshold voltage is 4V maximum at 250µA drain current. The device has a gate charge of 14nC at 10V and an input capacitance of 565pF at 25V drain-source voltage. The maximum power dissipation is 50W at Tc. The operating junction temperature range is -55°C to 150°C. The maximum gate-source voltage is ±30V. The MOSFET is supplied in a surface mount package compatible with TO-252-3, DPak (2 leads and tab), and SC-63 outlines. The supplier device package is TO-252AA. This component is suitable for applications requiring high voltage blocking and moderate current handling in a compact surface mount form factor.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.44 | $0.44 |
| 5,000+ | $0.42 | $0.42 |
| 12,500+ | $0.40 | $0.40 |
| 25,000+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
2.4A at case temperature (Tc).
3.4 Ohm maximum at 1.2A drain current and 10V gate-source voltage.
-55°C to 150°C junction temperature.
TO-252-3, DPak (2 leads + tab), SC-63, surface mount. Supplier device package is TO-252AA.
The database indicates RoHS3 compliant, but this is unverified.
4V maximum at 250µA drain current.