| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,888 pcs
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28888 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The FQD3N60CTM is an N-Channel power MOSFET manufactured by On Semiconductor, designed for high-voltage switching applications. It offers a drain-source voltage rating of 600V and a continuous drain current of 2.4A at Tc. The device features a maximum on-resistance of 3.4 Ohm at a gate drive of 10V and a drain current of 1.2A, ensuring efficient power conversion.
With a gate threshold voltage of 4V maximum, the MOSFET can be driven with standard logic-level signals for basic switching. The total gate charge is 14 nC at 10V, enabling fast switching transitions. Input capacitance is 565 pF at 25V drain-source voltage, and the maximum gate-source voltage is ±30V. The device is capable of dissipating up to 50W of power at Tc.
Packaged in a surface-mount TO-252-3 (DPak) case, the FQD3N60CTM is suitable for compact PCB layouts. The operating junction temperature range is -55°C to 150°C, making it suitable for demanding environments. The MOSFET is RoHS3 compliant and REACH unaffected, though these statuses are unverified and should be confirmed with the manufacturer.
The drain-source voltage (Vdss) is 600V.
The continuous drain current is 2.4A at Tc.
The device is available in a TO-252-3 (DPak) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.
The maximum on-resistance (Rds On) is 3.4 Ohm at Id=1.2A and Vgs=10V.