Mfr Part #:

FQD30N06TM

FQD30N06TM is a 60V, 22.7A N-Channel MOSFET from On Semiconductor. It features a low on-resistance of 45 mOhm and is available in a TO-252 surface mount package.

✓ Total Stock: 7,000 pcs

$ Price Range: $0.36 - $0.95

FQD30N06TM Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	20+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQD30N06TM Description

Short technical summary and product information.

The FQD30N06TM is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using planar stripe and DMOS technology. It is designed for applications requiring high efficiency and reliable performance. The device is rated for a drain-source voltage of 60V and a continuous drain current of 22.7A at 25°C case temperature. With a maximum on-resistance of 45 mOhm at Vgs=10V, it offers low conduction losses. The gate charge is typically 19 nC, enabling fast switching. The MOSFET is 100% avalanche tested and can handle 280 mJ of single pulse avalanche energy. It is suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications. The device is housed in a TO-252 (DPak) surface mount package and is RoHS, Pb-Free, and Halide Free compliant.

FQD30N06TM Quick Information

Product Type: MOSFET

Canonical Name: FQD30N06TM N-Channel MOSFET

Subcategory: N-Channel MOSFET

FQD30N06TM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-Free

FQD30N06TM Estimated Pricing

Qty	Low	High
1+	$0.95	$0.95
10+	$0.93	$0.93
30+	$0.91	$0.91
100+	$0.90	$0.90
500+	$0.46	$0.46
1,000+	$0.36	$0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQD30N06TM Features

Low on-resistance of 45 mOhm.
100% avalanche tested for reliability.
Low gate charge for fast switching.
RoHS and Pb-Free compliant.
Surface mount TO-252 package.

FQD30N06TM Applications

Used in switched mode power supplies.
Ideal for DC motor control circuits.
Suitable for audio amplifier outputs.
Used in variable switching power applications.

FQD30N06TM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the FQD30N06TM?

60V.

What is the package type of the FQD30N06TM?

TO-252-3 (DPak, SC-63).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQD30N06TM RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halide Free.

What is the maximum drain current?

22.7A continuous at Tc=25°C, 14.3A at Tc=100°C, and 90.8A pulsed.

What is the typical gate charge?

19 nC typical, 25 nC maximum at Vgs=10V.

What is the on-resistance?

45 mOhm maximum at Vgs=10V, Id=11.4A.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	22.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Halogen Free	Halide Free
Input Capacitance (Ciss) (Max) @ Vds	945 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5 W (Ta)
Rds On (Max) @ Id, Vgs	45 mOhm @ 11.4 A, 10 V
Supplier Device Package	TO-252AA
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25 V
Vgs(th) (Max) @ Id	4 V @ 250 µA