| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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401,778 pcs
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401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,360 pcs
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2360 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQD30N06LTM is an N-Channel enhancement mode power MOSFET from On Semiconductor, designed for low voltage applications requiring high efficiency switching. It is rated for a maximum drain-source voltage of 60V and a continuous drain current of 24A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 39mΩ at Vgs = 10V and Id = 12A, a typical gate charge of 15nC, and a maximum junction temperature of 150°C. The device is 100% avalanche tested and offers improved dv/dt capability, making it suitable for rugged power switching environments.
The MOSFET is housed in a TO-252-3 (DPak) surface mount package, also known as TO-252AA, and is RoHS3 compliant. It is well suited for automotive, DC/DC converter, and power management applications in portable and battery-operated products.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 24A at a case temperature of 25°C.
The maximum on-resistance is 39mΩ at Vgs = 10V and Id = 12A.
It comes in a TO-252-3 (DPak) surface mount package, also known as TO-252AA.
The operating junction temperature range is -55°C to 150°C.
Yes, it is marked as RoHS3 compliant.