DistyParts Icon
FQD2N80TM FQD2N80TM is an N-Channel MOSFET from ON Semiconductor with a drain-to-source voltage of 800V and continuous drain current of 1.8A. This surface-mount device comes in a DPAK (TO-252AA) package.
Mfr Part #:

FQD2N80TM

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQD2N80TM is an N-Channel MOSFET from ON Semiconductor with a drain-to-source voltage of 800V and continuous drain current of 1.8A. This surface-mount device comes in a DPAK (TO-252AA) package.
✓ Total Stock: 11,755 pcs

FQD2N80TM Available from 4 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQD2N80TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FQD2N80TM Description

Short technical summary and product information.

The FQD2N80TM is an N-Channel MOSFET manufactured by ON Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 1.8A at case temperature. The device has a low on-resistance (Rds(on)) of 6.3 ohms maximum at 900mA with a 10V gate drive. The gate threshold voltage is 5V maximum at 250µA.

 

This MOSFET is designed for high-voltage switching applications. It offers a total gate charge of 15nC at 10V and an input capacitance of 550pF at 25V, enabling efficient switching performance. The power dissipation is 50W at case temperature, with an operating junction temperature range of -55°C to 150°C.

 

The FQD2N80TM is supplied in a surface-mount DPAK package (TO-252-3, DPak, SC-63) with a supplier device package of TO-252AA. It is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.

FQD2N80TM Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 800V Vdss, 1.8A Id, DPAK (TO-252AA)
Subcategory: N-Channel MOSFET

FQD2N80TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD2N80TM Features

  • 800V drain-to-source voltage rating.
  • 1.8A continuous drain current capability.
  • Low 6.3 Ohm Rds(on) at 10V gate drive.
  • Surface-mount DPAK (TO-252AA) package.
  • RoHS3 compliant and REACH unaffected.

FQD2N80TM Applications

  • High-voltage switching power supplies.
  • AC-DC adapters and converters.
  • Power management systems.

FQD2N80TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FQD2N80TM?

The maximum drain-to-source voltage (Vdss) is 800V.

What is the continuous drain current of the FQD2N80TM?

The continuous drain current (Id) is 1.8A at case temperature.

What is the on-resistance of the FQD2N80TM?

The maximum on-resistance (Rds(on)) is 6.3 Ohms at 900mA and 10V gate drive.

What is the operating temperature range of the FQD2N80TM?

The operating junction temperature range is -55°C to 150°C.

What package is the FQD2N80TM available in?

The device is available in TO-252-3, DPak (2 Leads + Tab), SC-63; the supplier device package is TO-252AA.

Is the FQD2N80TM RoHS compliant?

Yes, it is listed as RoHS3 compliant, but this status is unverified.

Home
Account

Categories