| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQD2N60CTM-WS is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using their proprietary planar stripe and DMOS technology. This device is designed to deliver low on-state resistance and superior switching performance, making it suitable for a variety of power conversion applications.
Key electrical specifications include a drain-source voltage (Vdss) of 600V, continuous drain current of 1.9A at Tc=25°C, and a maximum on-resistance of 4.7 Ohm at Vgs=10V and Id=950mA. The gate threshold voltage is 4V maximum at Id=250µA. The device features a maximum gate charge of 12 nC at Vgs=10V and an input capacitance of 235 pF at Vds=25V.
The MOSFET is offered in a surface mount DPAK (TO-252AA) package, also known as TO-252-3 or DPak (2 Leads + Tab). It supports an operating junction temperature range of -55°C to +150°C and has a maximum power dissipation of 44W at Tc=25°C. The device is RoHS compliant and halogen-free.
The drain-source voltage (Vdss) is 600V.
The continuous drain current is 1.9A at Tc=25°C.
The maximum on-resistance (Rds(on)) is 4.7 Ohm at Vgs=10V and Id=950mA.
It is offered in a surface mount DPAK (TO-252AA) package, also known as TO-252-3 or DPak (2 Leads + Tab).
The operating junction temperature range is -55°C to +150°C.
Yes, the device is RoHS compliant and halogen-free according to the datasheet.
The maximum gate charge (Qg) is 12 nC at Vgs=10V.