FQD2N60CTM The FQD2N60CTM is an N-Channel enhancement mode power MOSFET by onsemi, rated for 600V drain-source voltage and 1.9A continuous drain current. It features a low on-resistance of 4.7 Ohm at 10V gate drive and comes in a surface mount TO-252 DPAK package.
Mfr Part #:

FQD2N60CTM

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQD2N60CTM is an N-Channel enhancement mode power MOSFET by onsemi, rated for 600V drain-source voltage and 1.9A continuous drain current. It features a low on-resistance of 4.7 Ohm at 10V gate drive and comes in a surface mount TO-252 DPAK package.
✓ Total Stock: 24,819 pcs
$ Price Range: $0.50

FQD2N60CTM Available from 5 distributors

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FQD2N60CTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD2N60CTM Description

Short technical summary and product information.

The FQD2N60CTM is a high-voltage N-Channel power MOSFET manufactured using onsemi's proprietary planar stripe and DMOS technology. It is designed for applications requiring efficient switching and high avalanche ruggedness.

 

Key electrical characteristics include a maximum drain-source voltage of 600V, continuous drain current of 1.9A at 25°C case temperature, and a typical on-resistance of 4.7 Ohm at 10V gate voltage. The device offers low gate charge (typical 8.5 nC) and low reverse transfer capacitance (typical 4.3 pF), enabling fast switching performance. It is also rated for single pulsed avalanche energy up to 120 mJ.

 

The FQD2N60CTM is housed in a TO-252 DPAK (DPAK3) surface mount package, suitable for automated assembly. It is RoHS compliant and halogen-free. Typical applications include switched-mode power supplies, active power factor correction circuits, and electronic lamp ballasts.

FQD2N60CTM Quick Information

Product Type: MOSFET
Series: FQD2N60C
Canonical Name: FQD2N60CTM N-Channel QFET MOSFET, 600V, 1.9A, 4.7 Ohm, TO-252 DPAK
Subcategory: N-Channel Enhancement Mode MOSFET

FQD2N60CTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQD2N60CTM Estimated Pricing

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1+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQD2N60CTM Features

  • N-Channel MOSFET, 600V drain-source voltage.
  • Low on-resistance: 4.7 Ohm max at 10V gate drive.
  • Low gate charge: typical 8.5 nC.
  • 100% avalanche tested, EAS 120 mJ.
  • RoHS compliant and halogen-free.

FQD2N60CTM Applications

  • Switched-mode power supplies (SMPS).
  • Active power factor correction (PFC) circuits.
  • Electronic lamp ballasts.
  • High-voltage DC-DC converters.

FQD2N60CTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQD2N60CTM?

The maximum drain-source voltage (Vdss) is 600 V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 1.9 A at Tc = 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 4.7 Ohm at VGS = 10 V and ID = 0.95 A.

What package is the FQD2N60CTM available in?

The device is available in a TO-252-3 DPAK (DPak) surface mount package, also known as SC-63.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FQD2N60CTM RoHS compliant?

Yes, the device is RoHS compliant and halogen-free.

What is the typical gate charge of the FQD2N60CTM?

The typical total gate charge (Qg) is 8.5 nC at VGS = 10 V.

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