| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,362 pcs
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3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD2N60CTF is an N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage of 600V and a continuous drain current of 1.9A. The on-resistance is typically 4.7 Ohm at 10V gate drive, with a maximum gate threshold voltage of 4V. The device is built with MOSFET (Metal Oxide) technology and offers an input capacitance of 235 pF and a gate charge of 12 nC.
The MOSFET is packaged in a surface mount TO-252-3 (DPak) package, also known as SC-63, with a DPak (2 Leads + Tab) footprint. The supplier device package is TO-252AA. It is rated for a maximum power dissipation of 44W at the case and 2.5W at ambient, with an operating temperature range of -55°C to 150°C. The part is listed as RoHS3 compliant, but this status is unverified.
Designed for general-purpose high-voltage switching, this MOSFET can be used in power supplies, DC-DC converters, and other applications requiring efficient switching and low conduction losses. The surface mount package enables compact PCB layouts and automated assembly.
The drain-source voltage (Vdss) is 600 V.
The continuous drain current is 1.9 A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 4.7 Ohm at 950mA drain current and 10V gate drive.
The operating temperature range is -55°C to 150°C.
The package is TO-252-3 (DPak) with 2 leads and tab, also known as SC-63. The supplier device package is TO-252AA.
It is listed as RoHS3 compliant, but this status is unverified.
The maximum gate threshold voltage (Vgs(th)) is 4 V at 250 µA drain current.