| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,034 pcs
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4034 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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1,318 pcs
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1318 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,160 pcs
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1160 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
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156 pcs
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156 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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61 pcs
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61 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD2N100TM is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using the proprietary QFET planar stripe and DMOS technology. This device is designed to provide low on-state resistance and superior switching performance with high avalanche energy strength. Key specifications include a maximum drain-source voltage of 1000V, continuous drain current of 1.6A at Tc=25°C (1.0A at Tc=100°C), and a maximum on-resistance of 9 Ohm at Vgs=10V and Id=0.8A. The MOSFET features low gate charge (typical 12 nC) and low reverse transfer capacitance (typical 5 pF), making it suitable for high-efficiency switching applications.
The device is 100% avalanche tested with single pulsed avalanche energy rating of 160 mJ and repetitive avalanche energy of 5.0 mJ. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 50W at case temperature 25°C (2.5W at ambient).
The FQD2N100TM is offered in a surface mount DPAK package (TO-252AA) with 3 leads, suitable for automated assembly. The part is supplied in tube packaging with 70 pieces per tube. It is Pb-Free, Halogen Free, and RoHS compliant, supporting environmental regulatory requirements. Common applications include switched mode power supplies, active power factor correction, and electronic lamp ballasts.
The maximum drain-source voltage (Vdss) is 1000V.
At case temperature 25°C, continuous drain current is 1.6A; at 100°C, it is 1.0A.
The maximum drain-source on-resistance is 9 Ohm at Vgs=10V and Id=0.8A.
It is available in a surface mount DPAK package (TO-252-3, TO-252AA equivalent).
The junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant, Pb-Free, and Halogen Free as per the datasheet.
The typical gate charge (Qg) is 12 nC at Vgs=10V; maximum is 15.5 nC.