FQD20N06TM The FQD20N06TM is an N-Channel power MOSFET from ON Semiconductor. It features a 60V drain-source voltage rating and 16.8A continuous drain current in a DPAK (TO-252) surface mount package.
Mfr Part #:

FQD20N06TM

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQD20N06TM is an N-Channel power MOSFET from ON Semiconductor. It features a 60V drain-source voltage rating and 16.8A continuous drain current in a DPAK (TO-252) surface mount package.
✓ Total Stock: 25,874 pcs

FQD20N06TM Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FQD20N06TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD20N06TM Description

Short technical summary and product information.

The FQD20N06TM is an N-Channel power MOSFET manufactured by ON Semiconductor, part of the company's discrete MOSFET portfolio. It is designed for general purpose power switching applications where high efficiency and compact size are required.

 

Key electrical specifications include a drain-source voltage (Vds) of 60V, continuous drain current (Id) of 16.8A at a case temperature of 25°C, and a maximum drain-source on-resistance (Rds(on)) of 63 mOhm at Vgs=10V and Id=8.4A. The gate threshold voltage (Vgs(th)) has a maximum of 4V at Id=250µA, and the maximum gate-source voltage is ±25V. The total gate charge (Qg) is 15 nC at Vgs=10V, and the input capacitance (Ciss) is 590 pF at Vds=25V, enabling moderate switching performance.

 

The device is surface mounted in a DPAK (TO-252-3) package, also referred to as SC-63, with a supplier device package of TO-252 (D-Pak). Power dissipation is rated up to 2.5W at ambient and 38W at case temperature (Tc=25°C). The operating junction temperature range is -55°C to 150°C, allowing use in harsh environments. This MOSFET is RoHS3 compliant and has an MSL of 1 (unlimited) for moisture sensitivity.

FQD20N06TM Quick Information

Product Type: Power MOSFET
Canonical Name: FQD20N06TM N-Channel Power MOSFET 60V 16.8A DPAK
Subcategory: Single MOSFETs

FQD20N06TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD20N06TM Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • 16.8A continuous drain current rating.
  • Low Rds(on) of 63 mOhm at 10V.
  • Surface mount DPAK (TO-252) package.
  • Wide operating temperature range -55°C to 150°C.

FQD20N06TM Applications

  • Suitable for power switching applications.
  • Used in DC-DC converter designs.
  • Ideal for battery management and protection.

FQD20N06TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD20N06TM?

60V.

What is the maximum continuous drain current at 25°C case temperature?

16.8A.

What package does the FQD20N06TM come in?

TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package TO-252 (D-Pak).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What is the maximum drain-source on-resistance at Vgs=10V?

63 mOhm at Id=8.4A.

What is the maximum gate threshold voltage?

4V at Id=250µA.

Is the FQD20N06TM RoHS compliant?

Yes, it is RoHS3 compliant based on existing database records (unverified).

Home
Account

Categories