| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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401,778 pcs
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401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD20N06LTM is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power management applications requiring a 60V drain-to-source voltage rating and a continuous drain current of 17.2A at case temperature (Tc).
The device features a maximum on-resistance (Rds(on)) of 60 milliohms at a gate drive of 10V and 8.6A drain current, enabling low conduction losses. It supports gate drive voltages of 5V and 10V, with a maximum gate threshold voltage of 2.5V at 250µA drain current. The gate charge is 13 nC at 5V, and the input capacitance is 630 pF at 25V drain-source voltage.
The FQD20N06LTM is offered in a surface-mount DPAK (TO-252AA) package, also known as TO-252-3 or SC-63, with two leads and a tab. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W at ambient temperature and 38W at case temperature.
The maximum drain-source voltage (Vdss) is 60 V.
The maximum continuous drain current is 17.2 A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 60 milliohms at a drain current of 8.6 A and gate-source voltage of 10 V.
It is available in a surface-mount DPAK (TO-252AA) package, also known as TO-252-3 or SC-63.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.