| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,197 pcs
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10197 pcs | On Request | 1 | On Request | On Request | 1120+ | On Request | On Request | |
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7,071 pcs
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7071 pcs | On Request | 1 | On Request | On Request | 1542 | On Request | On Request | |
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5,333 pcs
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5333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,842 pcs
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1842 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,430 pcs
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1430 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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85 pcs
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85 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD1N80TM is an N-Channel enhancement-mode MOSFET from On Semiconductor, designed for high-voltage switching applications. It is rated for a maximum drain-to-source voltage of 800V and a continuous drain current of 1A at case temperature. The device uses metal-oxide semiconductor (MOSFET) technology and is housed in a TO-252-3 DPAK surface-mount package.
Key electrical characteristics include a maximum drain-source on-resistance of 20 ohms at a gate voltage of 10V and drain current of 500mA, a maximum gate threshold voltage of 5V at 250µA, and a maximum gate charge of 7.2nC at 10V. The device supports a gate-source voltage range of ±30V and has an input capacitance of 195pF at 25V drain-source voltage.
The FQD1N80TM is suitable for high-voltage power switching circuits, power supplies, and other applications requiring high breakdown voltage with low drive requirements. The surface-mount DPAK package enables compact PCB layouts and efficient heat dissipation through the exposed tab.
The device operates over a junction temperature range of -55°C to 150°C, with maximum power dissipation of 2.5W at ambient temperature and 45W at case temperature. The TO-252AA supplier device package is compatible with standard surface-mount assembly processes.
The maximum drain-to-source voltage (Vdss) is 800V.
The maximum continuous drain current is 1A at case temperature (Tc).
The maximum on-resistance (Rds On) is 20 ohms at a gate voltage of 10V and drain current of 500mA.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-252-3 (DPak) surface-mount package with supplier device package TO-252AA.
The maximum gate charge (Qg) is 7.2nC at a gate voltage of 10V.
Maximum power dissipation is 2.5W at ambient temperature and 45W at case temperature.