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FQD1N60TF FQD1N60TF is a 600V N-Channel MOSFET from On Semiconductor, rated for 1A continuous drain current with a low on-resistance of 11.5 Ohms. It comes in a DPAK surface mount package.
Mfr Part #:

FQD1N60TF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQD1N60TF is a 600V N-Channel MOSFET from On Semiconductor, rated for 1A continuous drain current with a low on-resistance of 11.5 Ohms. It comes in a DPAK surface mount package.
✓ Total Stock: 3,900 pcs

FQD1N60TF Available from 1 distributor

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3,900 pcs
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3900 pcs On Request 1 On Request On Request 07+ On Request On Request
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FQD1N60TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD1N60TF Description

Short technical summary and product information.

The FQD1N60TF is a 600V N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using planar stripe DMOS technology. It is designed for high efficiency switch mode power supplies and offers a continuous drain current of 1A at 25°C, with a maximum drain-source on-resistance of 11.5 Ohms at Vgs = 10V. The device features low gate charge (typical 5.0 nC) and low Crss (typical 3.0 pF) for fast switching performance.

 

This MOSFET is 100% avalanche tested and has improved dv/dt capability, making it suitable for demanding power conversion applications. It can handle pulsed drain currents up to 4A and single pulsed avalanche energy up to 50 mJ. The device operates over a junction temperature range of -55°C to +150°C.

 

The FQD1N60TF is housed in a DPAK (TO-252) surface mount package, which is RoHS3 compliant and has an MSL rating of 1 (unlimited). It is suitable for automated assembly processes and is commonly used in power supply, lighting, and motor control circuits.

FQD1N60TF Quick Information

Product Type: MOSFET
Canonical Name: FQD1N60TF 600V N-Channel MOSFET, 1A, DPAK
Subcategory: Power MOSFET

FQD1N60TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD1N60TF Features

  • 600V drain-source voltage rating.
  • 1A continuous drain current capability.
  • 11.5 Ohm max on-resistance at 10V.
  • Low gate charge for fast switching.
  • 100% avalanche tested for reliability.

FQD1N60TF Applications

  • Used in switch mode power supplies.
  • Ideal for high voltage DC-DC converters.
  • Suitable for lighting ballast circuits.
  • Applied in motor control systems.

FQD1N60TF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQD1N60TF?

The maximum drain-source voltage (VDSS) is 600V.

What is the continuous drain current rating of the FQD1N60TF?

The continuous drain current (ID) is 1.0A at TC = 25°C.

What is the on-resistance of the FQD1N60TF?

The maximum drain-source on-resistance (Rds(on)) is 11.5 Ohms at Vgs = 10V and Id = 500 mA.

What package does the FQD1N60TF come in?

The FQD1N60TF comes in a DPAK (TO-252) surface mount package.

What is the operating temperature range of the FQD1N60TF?

The operating junction temperature range is -55°C to +150°C.

Is the FQD1N60TF RoHS compliant?

The FQD1N60TF is listed as RoHS3 compliant, though this is unverified.

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