| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,578 pcs
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15578 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The FQD1N60CTM is an N-Channel power MOSFET designed for high-voltage switching applications. Manufactured by ON Semiconductor, this device offers a drain-source voltage rating of 600V and a continuous drain current of 1A at 25°C case temperature. The maximum on-resistance is 11.5 Ohm at a gate drive of 10V and drain current of 500mA.
This MOSFET features a gate threshold voltage of 4V maximum and a total gate charge of 6.2 nC, enabling efficient switching. The input capacitance is 170 pF at 25V drain-source voltage. The device is capable of dissipating up to 28W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The FQD1N60CTM is housed in a surface-mount TO-252-3 (DPak, SC-63) package with a supplier device package of TO-252AA. It is suitable for power supply circuits, DC-DC converters, and motor control applications where high voltage and moderate current are required.
600V.
1A at 25°C case temperature.
11.5 Ohm maximum at 500mA drain current and 10V gate-source voltage.
-55°C to 150°C (junction temperature).
TO-252-3 (DPak, SC-63) surface mount package.
RoHS3 Compliant (unverified).
4V maximum at 250µA drain current.