FQD19N10TM ON Semiconductor FQD19N10TM is an N-Channel MOSFET with 100V drain-source voltage, 15.6A drain current, and 100mOhm on-resistance. It comes in a DPAK surface-mount package.
Mfr Part #:

FQD19N10TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
ON Semiconductor FQD19N10TM is an N-Channel MOSFET with 100V drain-source voltage, 15.6A drain current, and 100mOhm on-resistance. It comes in a DPAK surface-mount package.
✓ Total Stock: 25,000 pcs

FQD19N10TM Available from 1 distributor

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FQD19N10TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD19N10TM Description

Short technical summary and product information.

The ON Semiconductor FQD19N10TM is an N-Channel enhancement-mode MOSFET designed for high-efficiency power switching applications. It features a drain-source voltage (Vdss) of 100V and a continuous drain current of 15.6A at case temperature (Tc). The device offers a low on-resistance of 100mOhm maximum at 7.8A and 10V gate drive, minimizing conduction losses.

 

With a gate threshold voltage of 4V maximum at 250µA drain current and a maximum gate-source voltage of ±25V, the MOSFET is compatible with standard logic-level gate drives. The total gate charge is 25nC at 10V, enabling fast switching. Input capacitance is 780pF at 25V drain-source bias.

 

The device is housed in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with supplier device package TO-252AA. It operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature and 50W at case temperature.

FQD19N10TM Quick Information

Product Type: MOSFET
Canonical Name: ON Semiconductor FQD19N10TM N-Channel MOSFET
Subcategory: N-Channel

FQD19N10TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD19N10TM Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current of 15.6A at case temperature.
  • Low on-resistance of 100mOhm at 7.8A and 10V.
  • Surface-mount DPAK (TO-252) package.
  • Operating junction temperature range -55°C to 150°C.

FQD19N10TM Applications

  • Power supply switching circuits.
  • DC-DC converter applications.
  • Motor control and load switching.
  • General purpose power management.

FQD19N10TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQD19N10TM?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating of the FQD19N10TM?

The continuous drain current is 15.6A at case temperature (Tc).

What is the on-resistance of the FQD19N10TM?

The maximum on-resistance is 100mOhm at a drain current of 7.8A and gate-source voltage of 10V.

What package does the FQD19N10TM come in?

The FQD19N10TM is available in a TO-252-3 (DPak) surface-mount package, also known as SC-63.

What is the operating temperature range of the FQD19N10TM?

The operating junction temperature range is -55°C to 150°C.

Is the FQD19N10TM RoHS compliant?

The part is listed as RoHS3 compliant, but this data is unverified and should be confirmed with the manufacturer.

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