| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | 21+17+ | On Request | On Request |
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The ON Semiconductor FQD19N10TM is an N-Channel enhancement-mode MOSFET designed for high-efficiency power switching applications. It features a drain-source voltage (Vdss) of 100V and a continuous drain current of 15.6A at case temperature (Tc). The device offers a low on-resistance of 100mOhm maximum at 7.8A and 10V gate drive, minimizing conduction losses.
With a gate threshold voltage of 4V maximum at 250µA drain current and a maximum gate-source voltage of ±25V, the MOSFET is compatible with standard logic-level gate drives. The total gate charge is 25nC at 10V, enabling fast switching. Input capacitance is 780pF at 25V drain-source bias.
The device is housed in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with supplier device package TO-252AA. It operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature and 50W at case temperature.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current is 15.6A at case temperature (Tc).
The maximum on-resistance is 100mOhm at a drain current of 7.8A and gate-source voltage of 10V.
The FQD19N10TM is available in a TO-252-3 (DPak) surface-mount package, also known as SC-63.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this data is unverified and should be confirmed with the manufacturer.