| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100,000 pcs
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100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,520 pcs
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3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
929 pcs
|
929 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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827 pcs
|
827 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
416 pcs
|
416 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD19N10LTM is an N-Channel power MOSFET from ON Semiconductor. It features a drain-source voltage of 100V and a continuous drain current of 15.6A at case temperature. The on-resistance is typically 100mOhm at 7.8A and 10V gate drive. The device has a gate charge of 18nC at 5V and input capacitance of 870pF at 25V. It is designed for surface mount assembly in a TO-252-3 (DPAK) package with a TO-252AA supplier package. The operating junction temperature range is -55°C to 150°C. The device is RoHS3 compliant, MSL 1, and REACH unaffected. It is suitable for various power switching applications.
The maximum drain-source voltage is 100V.
The maximum continuous drain current is 15.6A at case temperature.
The maximum on-resistance is 100mOhm at 7.8A drain current and 10V gate drive.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-252-3 (DPAK) surface mount package.
Yes, it is RoHS3 compliant (unverified).
The maximum gate threshold voltage is 2V at 250µA drain current.