FQD19N10LTM N-Channel MOSFET from ON Semiconductor with 100V drain-source voltage, 15.6A drain current, and 100mOhm on-resistance. Surface mount package in TO-252 (DPAK).
Mfr Part #:

FQD19N10LTM

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from ON Semiconductor with 100V drain-source voltage, 15.6A drain current, and 100mOhm on-resistance. Surface mount package in TO-252 (DPAK).
✓ Total Stock: 105,692 pcs

FQD19N10LTM Available from 5 distributors

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FQD19N10LTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD19N10LTM Description

Short technical summary and product information.

The FQD19N10LTM is an N-Channel power MOSFET from ON Semiconductor. It features a drain-source voltage of 100V and a continuous drain current of 15.6A at case temperature. The on-resistance is typically 100mOhm at 7.8A and 10V gate drive. The device has a gate charge of 18nC at 5V and input capacitance of 870pF at 25V. It is designed for surface mount assembly in a TO-252-3 (DPAK) package with a TO-252AA supplier package. The operating junction temperature range is -55°C to 150°C. The device is RoHS3 compliant, MSL 1, and REACH unaffected. It is suitable for various power switching applications.

FQD19N10LTM Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 100V Vds, 15.6A Id, DPAK-3
Subcategory: N-Channel MOSFET

FQD19N10LTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD19N10LTM Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current of 15.6A at case temperature.
  • Low on-resistance of 100mOhm at 10V gate drive.
  • Surface mount DPAK package for compact designs.
  • RoHS3 compliant and MSL 1 rated.

FQD19N10LTM Applications

  • Power management in DC-DC converters.
  • Load switching for low-voltage systems.
  • Motor control in battery-powered devices.
  • General purpose power switching applications.

FQD19N10LTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD19N10LTM?

The maximum drain-source voltage is 100V.

What is the maximum drain current?

The maximum continuous drain current is 15.6A at case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 100mOhm at 7.8A drain current and 10V gate drive.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FQD19N10LTM available in?

It is available in a TO-252-3 (DPAK) surface mount package.

Is the FQD19N10LTM RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the gate threshold voltage?

The maximum gate threshold voltage is 2V at 250µA drain current.

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