FQD19N10

The FQD19N10 is an N-Channel enhancement mode power field-effect transistor manufactured by ON Semiconductor using proprietary planar stripe, DMOS technology. This advanced technology is optimized to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses.

Key electrical characteristics include a drain-source voltage of 100V, a continuous drain current of 15.6A at 25°C, and a typical on-resistance of 0.1 Ohm at VGS = 10V. It also features a low gate charge of 19 nC and low Crss of 32 pF, contributing to its fast switching capabilities. The device is 100% avalanche tested and offers improved dv/dt capability.

This MOSFET is well-suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. It is available in a TO-220-3 package for through-hole mounting.

Absolute maximum ratings include a continuous drain current of 9.8A at 100°C, a pulsed drain current of 62.4A, and a gate-source voltage of ±25V. Thermal characteristics include a junction-to-case thermal resistance of 2.5°C/W and a junction-to-ambient thermal resistance of 50°C/W when mounted on the minimum recommended PCB pad size.