| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,833 pcs
|
5833 pcs | On Request | 1 | On Request | On Request | 1852+ | On Request | On Request |
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| Technology |
The FQD18N20V2TM is an N-Channel MOSFET transistor manufactured by onsemi, utilizing QFET® technology. It is designed for applications requiring a high breakdown voltage, rated at 200V Drain-Source Voltage.
Key electrical specifications include a continuous Drain Current of 9.75A and a Power Dissipation of 83W. The Gate-Source Voltage is rated at ±30V, with an On-State Resistance of 0.14Ω and a Gate Charge of 26nC. This unipolar transistor features an enhancement mode channel.
The component is housed in a DPAK surface-mount package, suitable for automated assembly processes. The SMD mounting type ensures efficient integration into printed circuit boards. The standard package quantity is 2,500 pieces on a reel, facilitating high-volume production.
This MOSFET is suitable for various power switching and control applications where reliable performance and high voltage handling are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage is 200V.
The continuous Drain Current is 9.75A.
The Power Dissipation is 83W.
The On-State Resistance is 0.14Ω.
The FQD18N20V2TM is available in a DPAK package.
The FQD18N20V2TM is mounted using the SMD (Surface Mount Device) method.
The standard package quantity is 2500 pieces on a reel.