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FQD18N20V2TM N-Channel MOSFET rated for 200V drain-source voltage and 15A continuous current. Features low on-resistance of 140mOhm and low gate charge for efficient switching.
Mfr Part #:

FQD18N20V2TM

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 200V drain-source voltage and 15A continuous current. Features low on-resistance of 140mOhm and low gate charge for efficient switching.
✓ Total Stock: 33,322 pcs

FQD18N20V2TM Available from 7 distributors

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✓ Non-Authorised
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FQD18N20V2TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD18N20V2TM Description

Short technical summary and product information.

This N-Channel enhancement mode power MOSFET is produced using onsemi's proprietary planar stripe and DMOS technology. It is designed for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Key specifications include 200V drain-source voltage, 15A continuous current (25°C), 140mOhm maximum on-resistance at 10V gate drive, and typical gate charge of 20nC. The device is 100% avalanche tested and offers high avalanche energy strength. It is housed in a surface-mount DPAK (TO-252) package, suitable for automated assembly. Operating temperature range is -55°C to 150°C.

FQD18N20V2TM Quick Information

Product Type: Power MOSFET
Series: QFET
Canonical Name: FQD18N20V2TM N-Channel MOSFET
Subcategory: Single MOSFET

FQD18N20V2TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD18N20V2TM Features

  • 200V drain-source voltage rating.
  • 15A continuous drain current at 25°C.
  • Low on-resistance of 140mOhm at 10V.
  • Low gate charge of 20nC typical.
  • 100% avalanche tested.

FQD18N20V2TM Applications

  • Suitable for switched mode power supplies.
  • Used in active power factor correction circuits.
  • Ideal for electronic lamp ballasts.
  • High-frequency switching applications.

FQD18N20V2TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package is the FQD18N20V2TM available in?

Surface-mount DPAK (TO-252-3, DPak, SC-63) with supplier device package TO-252AA.

Is the FQD18N20V2TM RoHS compliant?

RoHS3 Compliant (unverified).

What is the typical gate charge?

20 nC at 10V.

What is the maximum on-resistance?

140 mOhm at 7.5A, 10V.

What is the single pulsed avalanche energy rating?

340 mJ.

What is the mounting type?

Surface mount.

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