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FQD17P06TM P-Channel MOSFET with 60V drain-source voltage and 12A continuous drain current. Features 135mOhm on-resistance at 10V gate drive and 27nC gate charge.
Mfr Part #:

FQD17P06TM

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with 60V drain-source voltage and 12A continuous drain current. Features 135mOhm on-resistance at 10V gate drive and 27nC gate charge.
✓ Total Stock: 382,824 pcs

FQD17P06TM Available from 5 distributors

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✓ Non-Authorised
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FQD17P06TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD17P06TM Description

Short technical summary and product information.

This is a P-Channel enhancement mode MOSFET from On Semiconductor, designed for switching applications. It offers a drain-source voltage of 60V and continuous drain current of 12A.

 

Key electrical characteristics include a maximum on-resistance of 135mOhm at 6A and 10V gate drive, gate threshold voltage up to 4V, and gate charge of 27nC. Input capacitance is 900pF at 25V drain-source.

 

The device is surface mounted in a DPAK (TO-252AA) package, suitable for automated assembly. Operating temperature range is -55°C to 150°C. Power dissipation is 2.5W at ambient and 44W at case temperature.

 

Typical applications include power management, load switching, and DC-DC converters where P-Channel MOSFETs simplify drive circuitry. The device is RoHS3 compliant and REACH unaffected.

FQD17P06TM Quick Information

Product Type: MOSFET
Canonical Name: FQD17P06TM P-Channel MOSFET
Subcategory: Single MOSFET

FQD17P06TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD17P06TM Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • 12A continuous drain current capability.
  • Low on-resistance of 135mOhm at 10V.
  • Surface mount DPAK (TO-252AA) package.
  • Wide operating temperature range -55°C to 150°C.

FQD17P06TM Applications

  • Power management in portable electronics.
  • Load switching for battery-powered systems.
  • DC-DC converter output stage switching.
  • Motor drive circuits requiring P-Channel MOSFET.

FQD17P06TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What is the continuous drain current?

12A.

What is the on-resistance?

135mOhm maximum at 6A and 10V gate drive.

What is the gate charge?

27nC maximum at 10V.

What is the operating temperature range?

-55°C to 150°C.

What package is this MOSFET available in?

Surface mount DPAK (TO-252AA).

Is this device RoHS compliant?

Yes, RoHS3 compliant (unverified).

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