| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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27,500 pcs
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27500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FQD17N08LTM is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for power switching applications requiring a drain-source voltage of up to 80V and a continuous drain current of 12.9A at 25°C case temperature. The device features a maximum on-resistance of 100mOhm at a gate drive of 10V and a drain current of 6.45A.
Key electrical characteristics include a gate threshold voltage of 2V max, a total gate charge of 11.5nC at 5V, and an input capacitance of 520pF at 25V. These parameters enable efficient switching in low- to medium-power circuits. The maximum power dissipation is 40W at case temperature 25°C, with derating to 2.5W at ambient temperature.
The MOSFET is housed in a TO-252-3 surface mount package, also known as DPak or SC-63, and is rated for an operating junction temperature range of -55°C to 150°C. This package is suitable for automated assembly and is commonly used in power management, DC-DC converters, and load switching applications.
80V.
-55°C to 150°C junction temperature.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
Listed as RoHS3 compliant, but this data is unverified; verify with manufacturer.
11.5 nC at Vgs = 5V.
100 mOhm at Id = 6.45A and Vgs = 10V.
520 pF at Vds = 25V.