FQD17N08LTM N-Channel MOSFET from ON Semiconductor, rated for 80V drain-source voltage and 12.9A continuous current. Features low on-resistance of 100mOhm at 10V gate drive.
Mfr Part #:

FQD17N08LTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from ON Semiconductor, rated for 80V drain-source voltage and 12.9A continuous current. Features low on-resistance of 100mOhm at 10V gate drive.
✓ Total Stock: 27,500 pcs

FQD17N08LTM Available from 1 distributor

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FQD17N08LTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD17N08LTM Description

Short technical summary and product information.

The FQD17N08LTM is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for power switching applications requiring a drain-source voltage of up to 80V and a continuous drain current of 12.9A at 25°C case temperature. The device features a maximum on-resistance of 100mOhm at a gate drive of 10V and a drain current of 6.45A.

 

Key electrical characteristics include a gate threshold voltage of 2V max, a total gate charge of 11.5nC at 5V, and an input capacitance of 520pF at 25V. These parameters enable efficient switching in low- to medium-power circuits. The maximum power dissipation is 40W at case temperature 25°C, with derating to 2.5W at ambient temperature.

 

The MOSFET is housed in a TO-252-3 surface mount package, also known as DPak or SC-63, and is rated for an operating junction temperature range of -55°C to 150°C. This package is suitable for automated assembly and is commonly used in power management, DC-DC converters, and load switching applications.

FQD17N08LTM Quick Information

Product Type: MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor)
Canonical Name: FQD17N08LTM - N-Channel MOSFET, 80V, 12.9A, TO-252
Subcategory: N-Channel MOSFET

FQD17N08LTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD17N08LTM Features

  • N-Channel MOSFET for 80V operation.
  • Low on-resistance of 100 milliohms.
  • Compact TO-252 surface mount package.
  • Operating temperature range -55°C to 150°C.
  • Gate charge of 11.5 nC for fast switching.

FQD17N08LTM Applications

  • Ideal for DC-DC converter circuits.
  • Suitable for load switching applications.
  • Used in power management systems.
  • Can be used in motor control circuits.

FQD17N08LTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the FQD17N08LTM?

80V.

What is the operating temperature range of this MOSFET?

-55°C to 150°C junction temperature.

What package is the FQD17N08LTM available in?

TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

Is the FQD17N08LTM RoHS compliant?

Listed as RoHS3 compliant, but this data is unverified; verify with manufacturer.

What is the typical gate charge of the FQD17N08LTM?

11.5 nC at Vgs = 5V.

What is the maximum on-resistance of this MOSFET?

100 mOhm at Id = 6.45A and Vgs = 10V.

What is the input capacitance?

520 pF at Vds = 25V.

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