| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,541 pcs
|
12541 pcs | On Request | 1 | On Request | On Request | 1441+ | On Request | On Request | |
|
4,030 pcs
|
4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD16N25CTM is an N-Channel enhancement mode power MOSFET produced using onsemi's proprietary planar stripe and DMOS technology. This device is designed to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
Key electrical specifications include a drain-source voltage (Vdss) of 250V, continuous drain current of 16A at 25°C (10.1A at 100°C), and a pulsed drain current capability of 64A. The maximum on-resistance is 270mOhm at Vgs=10V and Id=8A. The device offers a low typical gate charge of 41nC and low Crss of 68pF, enabling efficient high-frequency switching.
The MOSFET is rated for a maximum power dissipation of 160W at Tc=25°C and operates over a junction temperature range of -55°C to 150°C. It is 100% avalanche tested, with a single pulsed avalanche energy rating of 432mJ. The device is Pb-free and RoHS compliant.
Packaged in a surface-mount DPAK (TO-252AA) case, the FQD16N25CTM is supplied in tape and reel packaging with a standard quantity of 2500 units. It is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
The drain-source voltage (Vdss) is 250V.
The continuous drain current is 16A at Tc=25°C and 10.1A at Tc=100°C.
The maximum on-resistance (Rds on) is 270mOhm at Vgs=10V and Id=8A.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount DPAK (TO-252AA) package.
Yes, the device is Pb-free and RoHS3 compliant.
The maximum power dissipation is 160W at Tc=25°C.