| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,844 pcs
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3844 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,154 pcs
|
1154 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The FQD13N10LTM is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor. It utilizes MOSFET (Metal Oxide) technology and is designed for medium-voltage switching applications. The device features a maximum drain-to-source voltage of 100V and a continuous drain current rating of 10A at case temperature.
With a maximum drain-source on-resistance of 180mOhm at Vgs=10V and Id=5A, the FQD13N10LTM offers efficient power handling in a compact surface mount package. The gate charge is 12nC maximum at Vgs=5V, and the input capacitance is 520pF maximum at Vds=25V.
The MOSFET is housed in a TO-252-3 (DPak) package, also known as SC-63, with a surface mount mounting type. It is rated for operation over a junction temperature range of -55°C to 150°C and can dissipate up to 40W at the case. This device is suitable for power management and switching circuits in various electronic systems.
The maximum drain-to-source voltage (Vdss) is 100V.
The maximum continuous drain current is 10A at case temperature (Tc).
The maximum drain-source on-resistance is 180mOhm at Vgs=10V and Id=5A.
The junction operating temperature range is -55°C to 150°C.
It is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, also known as DPAK.
The maximum power dissipation is 2.5W at ambient temperature and 40W at case temperature.
The maximum gate threshold voltage is 2V at Id=250µA.