FQD13N06TM

The FQD13N06TM is an N-Channel MOSFET manufactured by ON Semiconductor, designed for general-purpose switching and power management applications. Key electrical specifications include a drain-to-source voltage (Vdss) of 60V, a continuous drain current (Id) of 10A at Tc, and a maximum on-resistance (Rds(on)) of 140mOhm at Vgs = 10V and Id = 5A. The device requires a drive voltage of 10V for optimal Rds(on) and has a maximum gate threshold voltage of 4V at 250µA. It features a maximum gate charge of 7.5nC at Vgs = 10V and an input capacitance of 310pF at Vds = 25V, contributing to moderate switching speeds. The MOSFET can dissipate up to 2.5W at ambient temperature (Ta) and 28W at case temperature (Tc). It operates over a junction temperature range of -55°C to 150°C. The device is offered in a surface-mount TO-252-3 (DPak) package, also known as the SC-63, with a supplier device package of TO-252AA. This makes it suitable for automated assembly in compact circuit designs. The technology is MOSFET (Metal Oxide). RoHS compliance is claimed as RoHS3, though unverified, and MSL level is 1 (unlimited). This component is commonly used in power supplies, DC-DC converters, and motor control circuits where moderate power handling and surface-mount packaging are required.