| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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401,778 pcs
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401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6,020 pcs
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6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,718 pcs
|
1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD13N06LTM is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Tc) of 11 A. The device offers a maximum on-resistance (Rds(on)) of 115 mΩ at a gate drive of 10 V and a drain current of 5.5 A, making it suitable for low-voltage power switching applications.
This MOSFET utilizes standard MOSFET (Metal Oxide) technology and is designed for surface-mount assembly. It is supplied in the TO-252-3 package, also known as DPAK or SC-63, with a supplier device package designation of TO-252AA. The device can dissipate up to 28 W at the case (Tc) and 2.5 W at ambient temperature (Ta).
The FQD13N06LTM has a maximum gate threshold voltage (Vgs(th)) of 2.5 V at a drain current of 250 µA, and a maximum gate charge (Qg) of 6.4 nC at a gate-source voltage of 5 V. The input capacitance (Ciss) is 350 pF at a drain-source voltage of 25 V. The operating junction temperature range is -55°C to 150°C.
The drain-to-source voltage (Vdss) is 60 V.
The maximum continuous drain current (Tc) is 11 A.
The maximum on-resistance (Rds(on)) is 115 mΩ at a gate-source voltage of 10 V and a drain current of 5.5 A.
The FQD13N06LTM is available in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 2.5 V at a drain current of 250 µA.
The maximum power dissipation is 28 W at the case temperature (Tc) and 2.5 W at ambient temperature (Ta).