| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD12P10TM is a P-Channel enhancement-mode power MOSFET manufactured by On Semiconductor using planar stripe DMOS technology. It is rated for a maximum drain-source voltage of -100V and a continuous drain current of -9.4A at 25°C case temperature, with a maximum on-resistance of 290mΩ at VGS = -10V and ID = 4.7A. The device supports gate-source voltages up to ±30V and offers a typical gate charge of 21nC, enabling efficient switching performance.
This MOSFET is designed for low-voltage applications including audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control. It provides fast switching characteristics, improved dv/dt capability, and is 100% avalanche tested, with a single pulsed avalanche energy rating of 370mJ. The device operates over a junction temperature range of -55°C to +150°C and dissipates up to 50W at 25°C case temperature.
The FQD12P10TM is housed in a TO-252-3 (DPak) surface-mount package with a supplier device package of TO-252AA. It is RoHS compliant, making it suitable for environmentally conscious designs. The part is part of the QFET family and is available as an alternate to the FQD12P10TF variant.
The maximum drain-source voltage (VDSS) is -100V.
The continuous drain current is -9.4A at TC = 25°C and -6.0A at TC = 100°C.
The maximum drain-source on-resistance is 290mΩ at VGS = 10V and ID = 4.7A.
The device comes in a TO-252-3 (DPak) surface-mount package with supplier device package TO-252AA.
The operating junction temperature range is -55°C to +150°C.
Yes, the datasheet states the device is RoHS compliant.
Maximum power dissipation is 50W at TC = 25°C and 2.5W at TA = 25°C.