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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQD12P10TF is a P-Channel enhancement mode power MOSFET manufactured using Fairchild's planar stripe DMOS technology, now part of On Semiconductor's portfolio. It is designed for low voltage applications requiring high efficiency and fast switching.
Key electrical specifications include a drain-source voltage rating of -100V, continuous drain current of -9.4A at Tc=25°C, and a maximum on-resistance of 0.29Ω at Vgs=-10V. The device features a low gate charge of 27nC (typical 21nC) and input capacitance of 800pF, enabling fast switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 370mJ.
The MOSFET is offered in a TO-252-3 (DPak) surface mount package with a supplier device package of TO-252AA. It operates over a junction temperature range of -55°C to 150°C and has a power dissipation of 50W at Tc=25°C. Thermal resistance junction-to-case is 2.5°C/W. The device is RoHS3 compliant.
Typical applications include audio amplifiers, high efficiency switching DC/DC converters, and DC motor control circuits. The FQD12P10TF is suitable for designs requiring a robust P-Channel MOSFET with low conduction losses and reliable switching.
The drain-source voltage rating is 100V.
The continuous drain current is 9.4A at Tc=25°C.
The maximum on-resistance is 290mΩ at Vgs=-10V and Id=4.7A.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant as stated in the datasheet.
It is available in a TO-252-3 (DPak) surface mount package.
The maximum gate charge is 27nC at Vgs=10V.