FQD12P10TF FQD12P10TF is a 100V, 9.4A P-Channel MOSFET from On Semiconductor. It features low on-resistance of 290mΩ and is housed in a TO-252 surface mount package.
Mfr Part #:

FQD12P10TF

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Mfr Name: On Semiconductor
On Semiconductor
FQD12P10TF is a 100V, 9.4A P-Channel MOSFET from On Semiconductor. It features low on-resistance of 290mΩ and is housed in a TO-252 surface mount package.
✓ Total Stock: 200,000 pcs

FQD12P10TF Available from 1 distributor

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FQD12P10TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD12P10TF Description

Short technical summary and product information.

The FQD12P10TF is a P-Channel enhancement mode power MOSFET manufactured using Fairchild's planar stripe DMOS technology, now part of On Semiconductor's portfolio. It is designed for low voltage applications requiring high efficiency and fast switching.

 

Key electrical specifications include a drain-source voltage rating of -100V, continuous drain current of -9.4A at Tc=25°C, and a maximum on-resistance of 0.29Ω at Vgs=-10V. The device features a low gate charge of 27nC (typical 21nC) and input capacitance of 800pF, enabling fast switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 370mJ.

 

The MOSFET is offered in a TO-252-3 (DPak) surface mount package with a supplier device package of TO-252AA. It operates over a junction temperature range of -55°C to 150°C and has a power dissipation of 50W at Tc=25°C. Thermal resistance junction-to-case is 2.5°C/W. The device is RoHS3 compliant.

 

Typical applications include audio amplifiers, high efficiency switching DC/DC converters, and DC motor control circuits. The FQD12P10TF is suitable for designs requiring a robust P-Channel MOSFET with low conduction losses and reliable switching.

FQD12P10TF Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQD12P10TF P-Channel MOSFET
Subcategory: P-Channel MOSFET

FQD12P10TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD12P10TF Features

  • P-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 9.4A.
  • Low on-resistance of 290 milliohms.
  • Fast switching with 27nC gate charge.
  • 100% avalanche tested for ruggedness.

FQD12P10TF Applications

  • Used in audio amplifier output stages.
  • Ideal for high efficiency DC/DC converters.
  • Suitable for DC motor control circuits.
  • Low voltage power management applications.

FQD12P10TF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD12P10TF?

The drain-source voltage rating is 100V.

What is the continuous drain current?

The continuous drain current is 9.4A at Tc=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 290mΩ at Vgs=-10V and Id=4.7A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FQD12P10TF RoHS compliant?

Yes, it is RoHS3 compliant as stated in the datasheet.

What package is the FQD12P10TF available in?

It is available in a TO-252-3 (DPak) surface mount package.

What is the gate charge of the FQD12P10TF?

The maximum gate charge is 27nC at Vgs=10V.

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