| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,565 pcs
|
6565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD12N20TF is an N-Channel MOSFET (Metal Oxide) from On Semiconductor, designed for power switching applications. It features a drain-source voltage rating of 200V and a continuous drain current of 9A at case temperature (Tc). The device has a maximum drain-source on-resistance of 280mOhm at a gate voltage of 10V and drain current of 4.5A.
The gate charge is up to 23nC at 10V, and input capacitance is 910pF at 25V. The gate threshold voltage is a maximum of 5V at 250µA drain current. The maximum gate-source voltage is ±30V. Power dissipation is rated at 2.5W at ambient temperature and 55W at case temperature. The operating junction temperature range is -55°C to 150°C.
The device is supplied in a TO-252-3 (DPak) surface mount package with a supplier device package of TO-252AA. Mounting type is surface mount. It is RoHS3 compliant, with MSL 1 (unlimited) and REACH unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.58 | $0.58 |
| 25+ | $0.57 | $0.57 |
| 100+ | $0.55 | $0.55 |
| 500+ | $0.52 | $0.52 |
| 1,000+ | $0.49 | $0.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V
TO-252-3 (DPak) surface mount package
-55°C to 150°C (junction)
RoHS3 Compliant
23 nC at 10V gate voltage
Maximum 280mOhm at 10V gate voltage and 4.5A drain current
9A at case temperature