| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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46,020 pcs
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46020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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26,279 pcs
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26279 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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6,058 pcs
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6058 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,466 pcs
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3466 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD12N20LTM is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using proprietary planar stripe and DMOS technology. This MOSFET is designed to deliver low on-state resistance and superior switching performance, making it suitable for a variety of power conversion applications.
Key electrical specifications include a maximum drain-to-source voltage of 200V, a continuous drain current of 9A at 25°C case temperature, and a maximum drain-source on-resistance of 280mΩ at VGS = 10V and ID = 4.5A. The device features a low typical gate charge of 16nC and a low typical reverse transfer capacitance of 17pF, contributing to efficient switching behavior. It is 100% avalanche tested, with a single pulsed avalanche energy rating of 210mJ.
The FQD12N20LTM is housed in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA. It supports a maximum power dissipation of 55W at a case temperature of 25°C and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (VDSS) is 200V.
The continuous drain current is 9A at a case temperature of 25°C, and 5.7A at 100°C.
The maximum drain-source on-resistance is 280mΩ at VGS = 10V and ID = 4.5A.
It is available in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified and has low confidence.