DistyParts Icon
FQD11P06TM P-Channel MOSFET rated for 60V drain-source voltage and 9.4A continuous drain current. Designed for surface mount assembly in DPAK (TO-252) package.
Mfr Part #:

FQD11P06TM

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET rated for 60V drain-source voltage and 9.4A continuous drain current. Designed for surface mount assembly in DPAK (TO-252) package.
✓ Total Stock: 62,276 pcs

FQD11P06TM Available from 6 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQD11P06TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FQD11P06TM Description

Short technical summary and product information.

The FQD11P06TM is a P-Channel MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of 60V and a continuous drain current of 9.4A (at Tc). The device uses MOSFET (Metal Oxide) technology and requires a drive voltage of 10V for optimized Rds(on).

 

The MOSFET offers a maximum on-resistance (Rds(on)) of 185mOhm at 4.7A and 10V gate drive. Gate charge (Qg) is 17nC at 10V, and input capacitance (Ciss) is 550pF at 25V. The maximum gate threshold voltage (Vgs(th)) is 4V at 250µA. Maximum gate-source voltage rating is ±30V.

 

Power dissipation is rated at 2.5W at ambient temperature (Ta) and 38W at case temperature (Tc). The device operates over a junction temperature range of -55°C to 150°C. It is designed for surface mount assembly and is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, with a supplier device package of TO-252AA.

FQD11P06TM Quick Information

Product Type: MOSFET
Canonical Name: FQD11P06TM
Subcategory: P-Channel MOSFET

FQD11P06TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD11P06TM Features

  • 60V drain-source voltage rating.
  • 9.4A continuous drain current.
  • 185mOhm maximum on-resistance.
  • 17nC gate charge (max at 10V).
  • Surface mount DPAK package.

FQD11P06TM Applications

  • High-side load switching in power systems.
  • Battery protection and management circuits.
  • DC-DC converter input polarity protection.
  • Motor drive and solenoid control applications.
  • Power distribution and load disconnect switches.

FQD11P06TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of FQD11P06TM?

60V maximum.

What package is the FQD11P06TM available in?

It is offered in TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. The supplier device package is TO-252AA.

What is the operating temperature range of FQD11P06TM?

-55°C to 150°C (junction temperature).

Is the FQD11P06TM RoHS compliant?

RoHS3 compliant according to database, but this status is unverified.

What is the maximum drain current of FQD11P06TM?

9.4A (Tc).

What is the maximum on-resistance of FQD11P06TM?

185mOhm at 4.7A and 10V gate drive.

What is the gate charge of FQD11P06TM?

Maximum gate charge is 17nC at 10V.

Home
Account

Categories