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FQD11P06TF FQD11P06TF is a P-Channel power MOSFET from On Semiconductor with 60V drain-source voltage and 9.4A continuous drain current. It comes in a surface-mount DPAK (TO-252) package.
Mfr Part #:

FQD11P06TF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQD11P06TF is a P-Channel power MOSFET from On Semiconductor with 60V drain-source voltage and 9.4A continuous drain current. It comes in a surface-mount DPAK (TO-252) package.
✓ Total Stock: 46,873 pcs

FQD11P06TF Available from 1 distributor

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46,873 pcs
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FQD11P06TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD11P06TF Description

Short technical summary and product information.

The FQD11P06TF is a P-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power management applications requiring a P-Channel switch. The device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 9.4A at case temperature (Tc).

 

Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 185mΩ at Vgs=10V and Id=4.7A, a typical gate charge (Qg) of 17nC at Vgs=10V, and an input capacitance (Ciss) of 550pF at Vds=25V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at Id=250µA, and the maximum gate-source voltage is ±30V.

 

The device is housed in a surface-mount DPAK (TO-252AA) package, which offers a compact footprint for space-constrained designs. Power dissipation is rated at 2.5W at ambient temperature (Ta) and 38W at case temperature (Tc). The operating junction temperature range is -55°C to +150°C.

FQD11P06TF Quick Information

Product Type: Power MOSFET
Canonical Name: FQD11P06TF P-Channel Power MOSFET, 60V, 9.4A, DPAK
Subcategory: Single MOSFET

FQD11P06TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD11P06TF Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • 9.4A continuous drain current at case temperature.
  • 185mΩ maximum on-resistance at 10V gate drive.
  • Surface-mount DPAK (TO-252) package for compact designs.
  • Operating junction temperature range -55°C to +150°C.

FQD11P06TF Applications

  • Used in DC-DC converter and power supply circuits.
  • Ideal for load switching and power management.
  • Suitable for motor control and actuator drivers.
  • Applicable in battery protection and charging circuits.

FQD11P06TF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD11P06TF?

The drain-source voltage (Vdss) is 60V.

What is the maximum drain current of the FQD11P06TF?

The continuous drain current (Id) is 9.4A at case temperature (Tc).

What is the on-resistance of the FQD11P06TF?

The maximum drain-source on-resistance (Rds(on)) is 185mΩ at Vgs=10V and Id=4.7A.

What package does the FQD11P06TF come in?

The device is offered in a surface-mount DPAK (TO-252AA) package.

What is the operating temperature range of the FQD11P06TF?

The operating junction temperature range is -55°C to +150°C.

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